Ease of Paralleling. Maximum Ratings. TOAB. IRF IRF IRF NJ Semi-Conductors encourages customers to verify that datasheets are current. IRF A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power. Part, IRF Category, Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel. Description, A, V, Ohm, N-channel.
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Case Temperature td off tf tr Fig. Drain Current Current regulator Same type as D.
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IRF Datasheet(PDF) – Vishay Siliconix
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irrf710 B, Mar This datasheet is subject to change without notice. Repetitive rating; pulse width limited by maximum junction temperature see fig. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
IRF MOSFET Datasheet pdf – Equivalent. Cross Reference Search
Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. Products may be manufactured at one of several qualified locations.
The TOAB package is if710 preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
B, Mar 7 8 9 10 Fig. To the maximum extent permitted by applicable law, Vishay disclaims i any and all liability arising out of the application or use of any product, ii any and all liability, including without limitation special, consequential or incidental damages, and iii any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry.