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Base-emitter saturation voltage Figure 8. Wejdz na jakis datasheet w internecie, wyklikaj ten element, znajdz jego dane i parametry. Futurlec, the electronic components and semiconductor. Safe operating area Figure 3. No license, express or implied, by estoppel or otherwise, to any intellectual property vatasheet is datashet under this document. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date.
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Bd, bda, bdb, bdc npn silicon power transistors 2 june revised september specifications are subject to change without notice. The datasheet is printed for reference information only. They are intended for use in medium power linear and switching applications.
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Bss8 nchannel logic level enhancement mode field effect. Datasheet identification advance information product status formative or in design first production definition this datasheet contains the design specifications for product development.
If any of these limits are exceeded, device functionality should. September 20 diodes incorporated bsn20 new datssheet nchannel enhancement mode field mosfet.
Vcc datasheet, cross reference, circuit and application notes in pdf format. Download or read online isc inchange semiconductor company bda dztasheet npn power transistors pdf data sheet. Units bvceo collectoremitter breakdown voltage ic 10ma. Obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild dahasheet.
If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
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However, stmicroelectronics assumes noresponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. Switching test circuit 20 db 50 attenuator pulse generator. Bd, bd electrical characteristics doc id rev 3 39 2 electrical characteristics.
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Collector-emitter saturation voltage Datasheer 7. Specifications may change in any manner without notice.
Datasheet identification product status definition advance information. Fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST datasneet no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
The datasheet is printed for reference information only.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or. Maximum ratings are those values beyond which device damage can occur. Operating junction temperature oc for pnp types voltage and current values are negative.